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...ctronic circuit]]s containing [[nonlinear device]]s, such as [[diode]]s, [[transistor]]s, [[vacuum tube]]s, and [[integrated circuit]]s, with [[linear equations] ...the components that make up ''electronic'' circuits, such as [[diode]]s, [[transistor]]s, [[integrated circuit]]s, and [[vacuum tube]]s are [[linear circuit|nonl ...

...ve]] output. It consists of an [[inverting amplifier]] element such as a [[transistor]] or [[op amp]] with its output [[feedback|fed back]] to its input through [[File:NPN-transistor-phase-shift-oscillator.png|thumb|250px|Circuit diagram for phase-shift osci ...

...current|current]] between the source and drain of a [[MOSFET]] when the [[transistor]] is in subthreshold region, or [[MOSFET#Modes of operation|weak-inversion] ...shold slope is used as a figure of merit for the switching efficiency of a transistor.<ref>''Physics of Semiconductor Devices'', S. M. Sze. New York: Wiley, 3rd ...

...-gate transistor''', is a type of [[metal–oxide–semiconductor field-effect transistor]] (MOSFET) where the gate is electrically isolated, creating a floating nod ...g storage element,<ref name="Mead"/> [[digital potentiometer]]s and single-transistor [[Digital-to-analog converter|DACs]]. ...

...BiCMOS Process Technology |first=H. |last=Puchner |title=Advanced Process Modeling for VLSI Technology |year=1996 |type=PhD |publisher=Institut für Mikroelekt Bipolar [[Transistor|transistors]] offer high speed, high gain, and low [[output impedance]] wit ...

...l–Poon model''' is a [[Transistor models|model]] of the [[bipolar junction transistor]]. It was first described in an article published by [[Hermann Gummel]] and ...ant effect that the Gummel–Poon model accounts for is the variation of the transistor <math>\beta_\text{F}</math> and <math>\beta_\text{R}</math> values with the ...

...r behaves as if it always conducts (or stuck-on), and stuck-open is when a transistor never conducts current (or stuck-off). Stuck-short produces a short between ...t.<ref>[http://web.eecs.umich.edu/~mazum/F02/lectures/lecmazum3.pdf "Fault Modeling"],''[University of Michigan]''</ref> ...

...erent [[Model (abstract)|models]] that range in complexity and in purpose. Transistor models divide into two major groups: models for device design and models fo ...r a [[NVRAM#The floating-gate transistor|memory device]] with some unusual modeling challenges related to charging the floating gate by an avalanche process). ...

{{Short description|Modeling semiconductor behavior}} ...on of [[Transistor models|compact models]] (such as the well known SPICE [[transistor]] models), which try to capture the electrical behavior of such devices but ...

* [[Spectral modeling synthesis]], an acoustic modeling approach ...Modular System]], a packaging standard for IBM second generation (discrete transistor) computers prior to the S/360. ...

...arasitic components. It is a standard data exchange format for exchanging modeling information among [[semiconductor]] device suppliers, [[simulation]] [[soft | title = Introduction to IBIS Modeling of Fiber Optic Transceivers ...

...r mixed signal circuits. It provides both continuous-time and event-driven modeling semantics, and so is suitable for analog, digital, and mixed analog/digital ...ts support for Verilog-AMS for both the simulator level and the behavioral modeling is growing. ...

...ts/56C3908478F358C00CA8357E7937CF8E |work=Nonlinear Circuit Simulation and Modeling: Fundamentals for Microwave Design |pages=1–46 |editor-last=Root |editor-fi Nonlinearity may be caused by heat due to power dissipation. Also, a transistor's operating point may move with temperature. ...

...ription|Variation in the effective width of the base in a bipolar junction transistor}} ...s the variation in the effective width of the base in a [[bipolar junction transistor]] (BJT) due to a variation in the applied base-to-collector voltage. A grea ...

{{Short description|Minimum source-to-gate voltage for a field effect transistor to be conducting from source to drain}} ...y abbreviated as V_th or V_GS(th), of a [[field-effect transistor]] (FET) is the minimum gate-to-source [[voltage]] (V_GS) that is ...

* System modeling and analysis: ** [[First principles|First principles modeling]] ...

...that incorporates an emitter degeneration [[resistor]] for only the output transistor, enabling the current source to generate low currents using only moderate r The Widlar circuit may be used with [[bipolar transistor]]s, [[MOSFET|MOS transistors]], and even [[vacuum tube]]s. An example appli ...

{{Short description|Modeling for semiconductor fabrication}} ...Semiconductor fabrication|fabrication of semiconductor]] devices such as [[transistor]]s. It is a branch of [[electronic design automation]], and part of a sub-f ...

...clude the creation of "compact models" (such as the well known [[SPICE]] [[transistor model]]s), which try to capture the electrical behavior of such devices but ...f technology and device development, product design and quality assurance. Modeling and simulation play a critical role in support of many aspects of this evol ...

==== Transistor faults ==== ...r behaves as it is always conducts (or stuck-on), and stuck-open is when a transistor never conducts current (or stuck-off). Stuck-short will produce a short bet ...