Copper indium gallium selenide

From Wikipedia, the free encyclopedia
(Redirected from Copper Indium Selenide)
Jump to navigation Jump to search

<templatestyles src="Chembox/styles.css"/>

Template:Chembox image cellTemplate:Chembox headerbarTemplate:Chembox IndexlistTemplate:Chembox JmolTemplate:Chembox ChEMBLTemplate:Chembox ECHATemplate:Chembox E numberTemplate:Chembox IUPHAR ligandTemplate:Chembox UNIITemplate:Chembox CompToxTemplate:Chembox headerbarTemplate:Chembox headerbarTemplate:Chembox Datapage checkTemplate:Yesno
Copper indium gallium selenide
Template:Longitem Template:Unbulleted list
ChEBI Template:Unbulleted list
ChemSpider Template:Unbulleted list
DrugBank Template:Unbulleted list
EC Number Template:Unbulleted list
KEGG Template:Unbulleted list
Template:Longitem Template:Unbulleted list
RTECS number Template:Unbulleted list
Template:Longitem CuIn1−xGaxSe2
Molar mass Template:Chem molar mass
Density ~5.7 g/cm3
Melting point Template:Chembox CalcTemperatures
Band gap 1.0–1.7 eV (x = 0–1)[1]
Template:Longitem tetragonal, Pearson symbol tI16 [1]
Template:Longitem I42d
Template:Longitem
a = 0.56–0.58 nm (x = 0–1), c = 1.10–1.15 nm (x = 0–1)

Template:Chembox Footer/tracking container onlyScript error: No such module "TemplatePar".Template:Short description

Copper indium gallium (di)selenide (CIGS) is a I-III-VI2 semiconductor material composed of copper, indium, gallium, and selenium. The material is a solid solution of copper indium selenide (often abbreviated "CIS") and copper gallium selenide. It has a chemical formula of CuIn1−xGaxSe2, where the value of x can vary from 0 (pure copper indium selenide) to 1 (pure copper gallium selenide). CIGS is a tetrahedrally bonded semiconductor, with the chalcopyrite crystal structure, and a bandgap varying continuously with x from about 1.0 eV (for copper indium selenide) to about 1.7 eV (for copper gallium selenide).

Structure

CIGS is a tetrahedrally bonded semiconductor, with the chalcopyrite crystal structure. Upon heating it transforms to the zincblende form and the transition temperature decreases from 1045 °C for x = 0 to 805 °C for x = 1.[1]

Applications

It is best known as the material for CIGS solar cells a thin-film technology used in the photovoltaic industry.[2] In this role, CIGS has the advantage of being able to be deposited on flexible substrate materials, producing highly flexible, lightweight solar panels. Improvements in efficiency have made CIGS an established technology among alternative cell materials.

See also

References

<templatestyles src="Reflist/styles.css" />

  1. a b c d Script error: No such module "Citation/CS1".
  2. Script error: No such module "citation/CS1".

Script error: No such module "Check for unknown parameters".

Template:Selenides