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{{short description|Lithographic technique that uses a pen to selectively deposit material}}
'''Scanning probe lithography'''<ref>{{Cite journal|title = Advanced scanning probe lithography|journal = Nature Nanotechnology|date = August 2014|issn = 1748-3387|pages = 577–587|volume = 9|issue = 8|doi = 10.1038/nnano.2014.157|first1 = Ricardo|last1 = Garcia|first2 = Armin W.|last2 = Knoll|first3 = Elisa|last3 = Riedo |author-link3=Elisa Riedo |pmid=25091447|arxiv = 1505.01260 |bibcode = 2014NatNa...9..577G |s2cid = 205450948}}</ref> ('''SPL''') describes a set of [[Nanolithography|nanolithographic]] methods to pattern material on the [[Nanoscopic scale|nanoscale]] using [[Scanning probe microscopy|scanning probes.]] It is a direct-write, [[Maskless lithography|mask-less]] approach which bypasses the [[Diffraction-limited system|diffraction limit]] and can reach resolutions below 10 nm.<ref name=":0" /> It is considered an alternative lithographic technology often used in academic and research environments. The term ''scanning probe lithography'' was coined after the first patterning experiments with [[scanning probe microscope]]s (SPM) in the late 1980s.<ref>{{US patent|4785189}}</ref>

== Classification ==
The different approaches towards SPL can be classified by their goal to either add or remove material, by the general nature of the process either chemical or physical, or according to the driving mechanisms of the probe-surface interaction used in the patterning process: [[Abrasion (mechanical)|mechanical]], [[Heat transfer|thermal]], [[Diffusion|diffusive]] and [[Electric current|electrical]].

== Overview ==

=== Mechanical/thermo-mechanical ===
Mechanical scanning probe lithography (m-SPL) is a nanomachining or ''nano-scratching''<ref>{{Cite journal|title = Top-Down Nanomechanical Machining of Three-Dimensional Nanostructures by Atomic Force Microscopy |journal = Small|doi=10.1002/smll.200901947|pmid = 20166110|volume=6|issue = 6|pages=724–728|year = 2010|last1 = Yan|first1 = Yongda|last2 = Hu|first2 = Zhenjiang|last3 = Zhao|first3 = Xueshen|last4 = Sun|first4 = Tao|last5 = Dong|first5 = Shen|last6 = Li|first6 = Xiaodong|doi-access = free}}</ref> [[Nanotechnology#Top-down approaches|top-down]] approach without the application of heat.<ref>{{Cite journal|title = Localized Surface Plasmon Resonance in Lithographically Fabricated Single Gold Nanowires|journal = The Journal of Physical Chemistry C|date = June 17, 2010|issn = 1932-7447|pages = 10359–10364|volume = 114|issue = 23|doi = 10.1021/jp1014725|first1 = Hsiang-An|last1 = Chen|first2 = Hsin-Yu|last2 = Lin|first3 = Heh-Nan|last3 = Lin}}</ref> Thermo-mechanical SPL applies heat together with a mechanical force, e.g. indenting of polymers in the [[Millipede memory]].

=== Thermal ===
{{Main|Thermal scanning probe lithography}}
Thermal scanning probe lithography (t-SPL) uses a heatable scanning probe in order to efficiently remove material from a surface without the application of significant mechanical forces. The patterning depth can be controlled to create high-resolution 3D structures.<ref>{{Cite journal|title = Direct three-dimensional nanoscale thermal lithography at high speeds using heated atomic-force microscope cantilevers|date = 2007|pages = 65171L–65171L–6|volume = 6517|doi = 10.1117/12.713374|first1 = Yueming|last1 = Hua|first2 = Shubham|last2 = Saxena|first3 = Jung C.|last3 = Lee|first4 = William P.|last4 = King|first5 = Clifford L.|last5 = Henderson|editor1-first = Michael J|editor1-last = Lercel|journal=Emerging Lithographic Technologies XI|bibcode = 2007SPIE.6517E..1LH|s2cid = 120189827}}</ref><ref>{{Cite journal|title = Nanoscale Three-Dimensional Patterning of Molecular Resists by Scanning Probes|journal = Science|date = 2010|issn = 0036-8075|pmid = 20413457|pages = 732–735|volume = 328|issue = 5979|doi = 10.1126/science.1187851|first1 = David|last1 = Pires|first2 = James L.|last2 = Hedrick|first3 = Anuja De|last3 = Silva|first4 = Jane|last4 = Frommer|first5 = Bernd|last5 = Gotsmann|first6 = Heiko|last6 = Wolf|first7 = Michel|last7 = Despont|first8 = Urs|last8 = Duerig|first9 = Armin W.|last9 = Knoll|bibcode = 2010Sci...328..732P |s2cid = 9975977|doi-access = free}}</ref>

=== Thermo-chemical ===
{{Main|Thermochemical nanolithography}}
Thermochemical scanning probe lithography (tc-SPL) or ''thermochemical nanolithography'' (TCNL) employs the scanning probe tips to induce thermally activated chemical reactions to change the chemical [[Functional group|functionality]] or the [[Phase (matter)|phase]] of surfaces. Such thermally activated reactions have been shown in [[protein]]s,<ref>{{Cite journal|title = Large-scale Nanopatterning of Single Proteins used as Carriers of Magnetic Nanoparticles |journal = Advanced Materials|doi=10.1002/adma.200902568|pmid = 20217754|volume=22|issue = 5|pages=588–591|year = 2010|last1 = Martínez|first1 = Ramsés V|last2 = Martínez|first2 = Javier|last3 = Chiesa|first3 = Marco|last4 = Garcia|first4 = Ricardo|last5 = Coronado|first5 = Eugenio|last6 = Pinilla-Cienfuegos|first6 = Elena|last7 = Tatay|first7 = Sergio| bibcode=2010AdM....22..588M |hdl = 10261/45215| s2cid=43146735 |hdl-access = free}}</ref> [[organic semiconductor]]s,<ref>{{Cite journal|title = Thermochemical nanopatterning of organic semiconductors|journal = Nature Nanotechnology|date = October 2009|issn = 1748-3387|pages = 664–668|volume = 4|issue = 10|doi = 10.1038/nnano.2009.254|first1 = Oliver|last1 = Fenwick|first2 = Laurent|last2 = Bozec|first3 = Dan|last3 = Credgington|first4 = Azzedine|last4 = Hammiche|first5 = Giovanni Mattia|last5 = Lazzerini|first6 = Yaron R.|last6 = Silberberg|first7 = Franco|last7 = Cacialli|pmid=19809458|bibcode = 2009NatNa...4..664F }}</ref> [[Electroluminescence|electroluminescent]] conjugated polymers,<ref>{{Cite journal|title = Direct writing and characterization of poly(p-phenylene vinylene) nanostructures|journal = Applied Physics Letters|date = 2009-12-07|issn = 0003-6951|pages = 233108|volume = 95|issue = 23|doi = 10.1063/1.3271178|first1 = Debin|last1 = Wang|first2 = Suenne|last2 = Kim|first3 = William D. Underwood|last3 = Ii|first4 = Anthony J.|last4 = Giordano|first5 = Clifford L.|last5 = Henderson|first6 = Zhenting|last6 = Dai|first7 = William P.|last7 = King|first8 = Seth R.|last8 = Marder|first9 = Elisa|last9 = Riedo|bibcode = 2009ApPhL..95w3108W | hdl=1853/46878 |hdl-access = free}}</ref> and [[nanoribbon]] resistors.<ref>{{Cite journal|title = On-Demand Patterning of Nanostructured Pentacene Transistors by Scanning Thermal Lithography |journal = Advanced Materials|doi=10.1002/adma.201202877|pmid = 23138983|volume=25|issue = 4|pages=552–558|year = 2013|last1 = Shaw|first1 = Joseph E|last2 = Stavrinou|first2 = Paul N|last3 = Anthopoulos|first3 = Thomas D| bibcode=2013AdM....25..552S |hdl = 10044/1/19476| s2cid=205247133 |hdl-access = free}}</ref> Furthermore, [[Protecting group|deprotection]] of [[functional group]]s<ref>{{Cite journal|title = Thermochemical Nanolithography of Multifunctional Nanotemplates for Assembling Nano-Objects |journal = Advanced Functional Materials|doi=10.1002/adfm.200901057|volume=19|issue = 23|pages=3696–3702|year = 2009|last1 = Wang|first1 = Debin|last2 = Kodali|first2 = Vamsi K|last3 = Underwood Ii|first3 = William D|last4 = Jarvholm|first4 = Jonas E|last5 = Okada|first5 = Takashi|last6 = Jones|first6 = Simon C|last7 = Rumi|first7 = Mariacristina|last8 = Dai|first8 = Zhenting|last9 = King|first9 = William P|last10 = Marder|first10 = Seth R|last11 = Curtis|first11 = Jennifer E|last12 = Riedo|first12 = Elisa| s2cid=96263209 }}</ref> (sometimes involving a temperature gradients<ref>{{Cite journal|title = Fabricating Nanoscale Chemical Gradients with ThermoChemical NanoLithography|journal = Langmuir|date = July 9, 2013|issn = 0743-7463|pages = 8675–8682|volume = 29|issue = 27|doi = 10.1021/la400996w|pmid = 23751047|first1 = Keith M.|last1 = Carroll|first2 = Anthony J.|last2 = Giordano|first3 = Debin|last3 = Wang|first4 = Vamsi K.|last4 = Kodali|first5 = Jan|last5 = Scrimgeour|first6 = William P.|last6 = King|first7 = Seth R.|last7 = Marder|first8 = Elisa|last8 = Riedo|first9 = Jennifer E.|last9 = Curtis}}</ref>), [[Reduction (chemistry)|reduction]] of oxides,<ref>{{Cite journal|title = Nanoscale Tunable Reduction of Graphene Oxide for Graphene Electronics|journal = Science|date = 11 Jun 2010|issn = 0036-8075|pmid = 20538944|pages = 1373–1376|volume = 328|issue = 5984|doi = 10.1126/science.1188119|first1 = Zhongqing|last1 = Wei|first2 = Debin|last2 = Wang|first3 = Suenne|last3 = Kim|first4 = Soo-Young|last4 = Kim|first5 = Yike|last5 = Hu|first6 = Michael K.|last6 = Yakes|first7 = Arnaldo R.|last7 = Laracuente|first8 = Zhenting|last8 = Dai|first9 = Seth R.|last9 = Marder|bibcode = 2010Sci...328.1373W |citeseerx = 10.1.1.635.6671|s2cid = 9672782}}</ref> and the [[crystallization]] of piezoelectric/ferroelectric [[ceramics]]<ref>{{Cite journal|title = Direct Fabrication of Arbitrary-Shaped Ferroelectric Nanostructures on Plastic, Glass, and Silicon Substrates |journal = Advanced Materials|volume = 23|issue = 33|pages = 3786–90|doi=10.1002/adma.201101991|pmid = 21766356|year = 2011|last1 = Kim|first1 = Suenne|last2 = Bastani|first2 = Yaser|last3 = Lu|first3 = Haidong|last4 = King|first4 = William P|last5 = Marder|first5 = Seth|author6-link=Kenneth Sandhage |last6 = Sandhage|first6 = Kenneth H|last7 = Gruverman|first7 = Alexei|last8 = Riedo|first8 = Elisa|last9 = Bassiri-Gharb|first9 = Nazanin| bibcode=2011AdM....23.3786K | s2cid=205241466 }}</ref> has been demonstrated.

=== Dip-pen/thermal dip-pen ===
{{Main|Dip-pen nanolithography}}
Dip-pen scanning probe lithography (dp-SPL) or ''dip-pen nanolithography'' (DPN) is a scanning probe lithography technique based on [[diffusion]], where the tip is employed to create patterns on a range of substances by deposition of a variety of liquid [[ink]]s.<ref>{{Cite journal|title = Deposition of Organic Material by the Tip of a Scanning Force Microscope|journal = Langmuir|date = April 1, 1995|issn = 0743-7463|pages = 1061–1064|volume = 11|issue = 4|doi = 10.1021/la00004a004|first1 = Manfred|last1 = Jaschke|first2 = Hans-Juergen|last2 = Butt}}</ref><ref>{{Cite journal|title = The Evolution of Dip-Pen Nanolithography |journal = Angewandte Chemie International Edition|doi=10.1002/anie.200300608|pmid = 14694469|volume=43|issue = 1|pages=30–45|year = 2004|last1 = Ginger|first1 = David S|last2 = Zhang|first2 = Hua|last3 = Mirkin|first3 = Chad A|citeseerx = 10.1.1.462.6653}}</ref><ref>{{Cite journal|title = "Dip-Pen" Nanolithography|journal = Science|date = 1999-01-29|issn = 0036-8075|pmid = 9924019|pages = 661–663|volume = 283|issue = 5402|doi = 10.1126/science.283.5402.661|first1 = Richard D.|last1 = Piner|first2 = Jin|last2 = Zhu|first3 = Feng|last3 = Xu|first4 = Seunghun|last4 = Hong|first5 = Chad A.|last5 = Mirkin| s2cid=27011581 }}</ref> Thermal dip-pen scanning probe lithography or ''thermal dip-pen nanolithography'' (TDPN) extends the usable inks to solids, which can be deposited in their liquid form when the probes are pre-heated.<ref>{{Cite journal|title = Direct deposition of continuous metal nanostructures by thermal dip-pen nanolithography|journal = Applied Physics Letters|date = 2006-01-16|issn = 0003-6951|pages = 033104|volume = 88|issue = 3|doi = 10.1063/1.2164394|first1 = B. A.|last1 = Nelson|first2 = W. P.|last2 = King|first3 = A. R.|last3 = Laracuente|first4 = P. E.|last4 = Sheehan|first5 = L. J.|last5 = Whitman|bibcode = 2006ApPhL..88c3104N }}</ref><ref>{{Cite journal|title = Chemically Isolated Graphene Nanoribbons Reversibly Formed in Fluorographene Using Polymer Nanowire Masks|journal = Nano Letters|date = December 14, 2011|issn = 1530-6984|pages = 5461–5464|volume = 11|issue = 12|doi = 10.1021/nl203225w|first1 = Woo-Kyung|last1 = Lee|first2 = Jeremy T.|last2 = Robinson|first3 = Daniel|last3 = Gunlycke|first4 = Rory R.|last4 = Stine|first5 = Cy R.|last5 = Tamanaha|first6 = William P.|last6 = King|first7 = Paul E.|last7 = Sheehan|pmid=22050117|bibcode = 2011NanoL..11.5461L}}</ref><ref>{{Cite journal|title = Maskless Nanoscale Writing of Nanoparticle−Polymer Composites and Nanoparticle Assemblies using Thermal Nanoprobes|journal = Nano Letters|date = January 13, 2010|issn = 1530-6984|pages = 129–133|volume = 10|issue = 1|doi = 10.1021/nl9030456|first1 = Woo Kyung|last1 = Lee|first2 = Zhenting|last2 = Dai|first3 = William P.|last3 = King|first4 = Paul E.|last4 = Sheehan|bibcode = 2010NanoL..10..129L|pmid=20028114}}</ref>

=== Oxidation ===
{{Main|Local oxidation nanolithography}}
Oxidation scanning probe lithography (o-SPL), also called ''local oxidation nanolithography'' (LON), ''scanning probe oxidation, nano-oxidation, local anodic oxidation,'' ''AFM oxidation lithography'' is based on the spatial confinement of an [[Redox|oxidation]] reaction.<ref>{{Cite journal|title = Modification of hydrogen-passivated silicon by a scanning tunneling microscope operating in air|journal = Applied Physics Letters|date = 1990-05-14|issn = 0003-6951|pages = 2001–2003|volume = 56|issue = 20|doi = 10.1063/1.102999|first1 = J. A.|last1 = Dagata|first2 = J.|last2 = Schneir|first3 = H. H.|last3 = Harary|first4 = C. J.|last4 = Evans|first5 = M. T.|last5 = Postek|first6 = J.|last6 = Bennett|bibcode = 1990ApPhL..56.2001D |url = https://zenodo.org/record/1231820}}</ref><ref>{{Cite journal|title = Nano-chemistry and scanning probe nanolithographies - Chemical Society Reviews (RSC Publishing)|url = http://xlink.rsc.org/?DOI=B501599P|journal = Chemical Society Reviews| date=16 December 2006 | volume=35 | issue=1 | pages=29–38 | doi=10.1039/B501599P |access-date = 2015-05-08 | last1=Garcia | first1=Ricardo | last2=Martinez | first2=Ramses V. | last3=Martinez | first3=Javier | pmid=16365640 | hdl=10261/18736 | hdl-access=free }}</ref>

=== Bias induced ===
Bias-induced scanning probe lithography (b-SPL) uses the high [[Electric field|electrical fields]] created at the apex of a probe tip when voltages are applied between tip and sample to facilitate and confining a variety of chemical reactions to [[Decomposition|decompose]] gases<ref>{{Cite journal|title = Nanopatterning of carbonaceous structures by field-induced carbon dioxide splitting with a force microscope|journal = Applied Physics Letters|date = 2010-04-05|issn = 0003-6951|pages = 143110|volume = 96|issue = 14|doi = 10.1063/1.3374885|first1 = R.|last1 = Garcia|first2 = N. S.|last2 = Losilla|first3 = J.|last3 = Martínez|first4 = R. V.|last4 = Martinez|first5 = F. J.|last5 = Palomares|first6 = Y.|last6 = Huttel|first7 = M.|last7 = Calvaresi|first8 = F.|last8 = Zerbetto|bibcode = 2010ApPhL..96n3110G |hdl = 10261/25613|hdl-access = free}}</ref> or liquids<ref name=":0">{{Cite journal|title = Patterning Polymeric Structures with 2 nm Resolution at 3 nm Half Pitch in Ambient Conditions|journal = Nano Letters|date = July 1, 2007|issn = 1530-6984|pages = 1846–1850|volume = 7|issue = 7|doi = 10.1021/nl070328r|first1 = R. V.|last1 = Martínez|first2 = N. S.|last2 = Losilla|first3 = J.|last3 = Martinez|first4 = Y.|last4 = Huttel|first5 = R.|last5 = Garcia|bibcode = 2007NanoL...7.1846M|pmid=17352509}}</ref><ref>{{cite journal | last1 = Suez | first1 = Itai | display-authors = etal | year = 2007 | title = High-Field Scanning Probe Lithography in Hexadecane: Transitioning from Field Induced Oxidation to Solvent Decomposition through Surface Modification | journal = Advanced Materials | volume = 19 | issue = 21| pages = 3570–3573 | doi = 10.1002/adma.200700716 | bibcode = 2007AdM....19.3570S | s2cid = 55556149 }}</ref> in order to locally deposit and grow materials on surfaces.

=== Current induced ===
In current induced scanning probe lithography (c-SPL) in addition to the high electrical fields of b-SPL, also a focused [[Electron-beam lithography|electron current]] which emanates from the SPM tip is used to create nanopatterns, e.g. in polymers<ref>{{Cite journal|title = Electrostatic nanolithography in polymers using atomic force microscopy|journal = Nature Materials|date = July 2003|issn = 1476-1122|pages = 468–472|volume = 2|issue = 7|doi = 10.1038/nmat926|pmid = 12819776|first1 = Sergei F.|last1 = Lyuksyutov|first2 = Richard A.|last2 = Vaia|first3 = Pavel B.|last3 = Paramonov|first4 = Shane|last4 = Juhl|first5 = Lynn|last5 = Waterhouse|first6 = Robert M.|last6 = Ralich|first7 = Grigori|last7 = Sigalov|first8 = Erol|last8 = Sancaktar|bibcode = 2003NatMa...2..468L |s2cid = 17619099}}</ref> and molecular glasses.<ref>{{Cite journal|title = Nanolithography by scanning probes on calixarene molecular glass resist using mix-and-match lithography|journal = Journal of Micro/Nanolithography, MEMS, and MOEMS |doi=10.1117/1.JMM.12.3.031111|volume=12|issue = 3 |pages=031111|bibcode=2013JMM&M..12c1111K|year = 2013|last1 = Kaestner|first1 = Marcus|last2 = Hofer |first2 = Manuel |last3 = Rangelow |first3 = Ivo W |s2cid = 122125593 |url = https://zenodo.org/record/3437544 }}</ref>

=== Magnetic ===

Various scanning probe techniques have been developed to write [[magnetization]] patterns into [[ferromagnetic]] structures which are often described as magnetic SPL techniques. Thermally-assisted magnetic scanning probe lithography (tam-SPL)<ref>{{cite journal|last1=Albisetti|first1=E.|last2=Petti|first2=D.|last3=Pancaldi|first3=M.|last4=Madami|first4=M.|last5=Tacchi|first5=S.|last6=Curtis|first6=J.|last7=King|first7=W. P.|last8=Papp|first8=A.|last9=Csaba|first9=G.|last10=Porod|first10=W.|last11=Vavassori|first11=P.|last12=Riedo|first12=E.|last13=Bertacco|first13=R.|title=Nanopatterning reconfigurable magnetic landscapes via thermally assisted scanning probe lithography|journal=Nature Nanotechnology|volume=11|issue=6|pages=545–551|doi=10.1038/nnano.2016.25|pmid=26950242|language=En|issn=1748-3395|bibcode=2016NatNa..11..545A|year=2016|hdl=11311/1004182|url=https://re.public.polimi.it/bitstream/11311/1004182/1/post-print.pdf|hdl-access=free}}</ref> operates by employing a heatable scanning probe to locally heat and cool regions of an [[exchange bias|exchange-biased]] ferromagnetic layer in the presence of an external magnetic field. This causes a shift in the [[magnetic hysteresis|hysteresis loop]] of exposed regions, pinning the magnetization in a different orientation compared to unexposed regions. The pinned regions become stable even in the presence of external fields after cooling, allowing arbitrary nanopatterns to be written into the magnetization of the ferromagnetic layer.

In arrays of interacting ferromagnetic nano-islands such as [[Geometrical frustration#Artificial geometrically frustrated ferromagnets|artificial spin ice]], scanning probe techniques have been used to write arbitrary magnetic patterns by locally reversing the magnetization of individual islands. Topological defect-driven magnetic writing (TMW)<ref>{{cite journal|last1=Gartside|first1=J. C.|last2=Arroo|first2=D. M.|last3=Burn|first3=D. M.|last4=Bemmer|first4=V. L.|last5=Moskalenko|first5=A.|last6=Cohen|first6=L. F.|last7=Branford|first7=W. R.|title=Realization of ground state in artificial kagome spin ice via topological defect-driven magnetic writing|journal=Nature Nanotechnology|volume=13|issue=1|pages=53–58|date=2017|doi=10.1038/s41565-017-0002-1|pmid=29158603|language=en|arxiv=1704.07439|bibcode=2018NatNa..13...53G|s2cid=119338468}}</ref> uses the dipolar field of a magnetized scanning probe to induce [[domain wall (magnetism)|topological defects]] in the magnetization field of individual ferromagnetic islands. These topological defects interact with the island edges and annihilate, leaving the magnetization reversed. Another way of writing such magnetic patterns is field-assisted magnetic force microscopy patterning,<ref>{{cite journal|last1=Wang|first1=Yong-Lei|last2=Xiao|first2=Zhi-Li|last3=Snezhko|first3=Alexey|last4=Xu|first4=Jing|last5=Ocola|first5=Leonidas E.|last6=Divan|first6=Ralu|last7=Pearson|first7=John E.|last8=Crabtree|author-link8=George Crabtree|first8=George W.|last9=Kwok|first9=Wai-Kwong|title=Rewritable artificial magnetic charge ice|journal=Science|date=20 May 2016|volume=352|issue=6288|pages=962–966|doi=10.1126/science.aad8037|pmid=27199423|language=en|issn=0036-8075|arxiv=1605.06209|bibcode=2016Sci...352..962W|s2cid=28077289}}</ref> where an external magnetic field a little below the switching field of the nano-islands is applied and a magnetized scanning probe is used to locally raise the field strength above that required to reverse the magnetization of selected islands.

In magnetic systems where interfacial [[Dzyaloshinskii-Moriya Interaction|Dzyaloshinskii–Moriya interactions]] stabilize magnetic textures known as [[magnetic skyrmion]]s, scanning-probe magnetic nanolithography has been employed for the direct writing of skyrmions and skyrmion lattices.<ref>{{cite journal|last1=Zhang|first1=Senfu|last2=Zhang|first2=Junwei|last3=Zhang|first3=Qiang|last4=Barton|first4=Craig|last5=Neu|first5=Volker|last6=Zhao|first6=Yuelei|last7=Hou|first7=Zhipeng|last8=Wen|first8=Yan|last9=Gong|first9=Chen|last10=Kasakova|first10=Olga|last11=Wang|first11=Wenhong|last12=Peng|first12=Yong|last13=Garanin|first13=Dmitry A.|last14=Chudnovsky|first14=Eugene M.|last15=Zhang|first15=Xixiang|title=Direct writing of room temperature and zero field skyrmion lattices by a scanning local magnetic field|journal=Applied Physics Letters|volume=112|pages=132405|date=2018|issue=13|doi=10.1063/1.5021172|bibcode=2018ApPhL.112m2405Z|hdl=10754/627497|language=en|hdl-access=free}}</ref><ref>{{cite journal|last1=Ognev|first1=A. V.|last2=Kolesnikov|first2=A. G.|last3=Kim|first3=Yong Jin|last4=Cha|first4=In Ho|last5=Sadnikov|first5=A. V.|last6=Nikitov|first6=S. A.|last7=Soldatov|first7=I. V.|last8=Talapatra|first8=A.|last9=Mohanty|first9=J.|last10=Mruczkiewicz|first10=M.|last11=Ge|first11=Y.|last12=Kerber|first12=N.|last13=Dittrich|first13=F.|last14=Virnau|first14=P.|last15=Kläui|first15=M.|last16=Kim|first16=Young Keun|last17=Samardak|first17=A. S.|title=Magnetic Direct-Write Skyrmion Nanolithography|journal=ACS Nano|volume=14|issue=11|pages=14960–14970|date=2020|doi=10.1021/acsnano.0c04748|pmid=33152236|s2cid=226270306 |url=http://raiith.iith.ac.in/11228/1/Magnetic_direct_write_skyrmion_nanolithography.pdf |language=en}}</ref>

== Comparison to other lithographic techniques ==
Being a serial technology, SPL is inherently slower than e.g. photolithography or [[nanoimprint lithography]], while parallelization as required for mass-fabrication is considered a large [[systems engineering]] effort (''see also [[Millipede memory]]''). As for resolution, SPL methods bypass the optical [[Diffraction-limited system|diffraction limit]] due to their use of scanning probes compared with [[Photolithography|photolithographic]] methods. Some probes have integrated in-situ [[metrology]] capabilities, allowing for feedback control during the write process.<ref>[https://register.epo.org/application?number=EP13184651&tab=main] Scanning probe nanolithography system and method (EP2848997 A1)</ref> SPL works under [[Standard temperature and pressure|ambient atmospheric conditions]], without the need for ultra high vacuum ([[Ultra-high vacuum|UHV]]), unlike [[Electron-beam lithography|e-beam]] or [[Extreme ultraviolet lithography|EUV lithography]].

== References ==
{{Reflist|40em}}
*

{{SPM2}}
{{Nanolith}}

[[Category:Lithography (microfabrication)]]
[[Category:Nanotechnology]]
[[Category:Scanning probe microscopy]]

Scanning probe lithography - Revision history

imported>Citation bot: Altered title. Added bibcode. | Use this bot. Report bugs. | Suggested by Headbomb | Linked from Wikipedia:WikiProject_Academic_Journals/Journals_cited_by_Wikipedia/Sandbox | #UCB_webform_linked 231/308