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	<title>Scanning gate microscopy - Revision history</title>
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	<updated>2026-05-13T02:10:45Z</updated>
	<subtitle>Revision history for this page on the wiki</subtitle>
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		<title>205.175.106.232: /* Development */</title>
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		<updated>2022-03-16T21:39:34Z</updated>

		<summary type="html">&lt;p&gt;&lt;span class=&quot;autocomment&quot;&gt;Development&lt;/span&gt;&lt;/p&gt;
&lt;p&gt;&lt;b&gt;New page&lt;/b&gt;&lt;/p&gt;&lt;div&gt;&amp;#039;&amp;#039;&amp;#039;Scanning gate microscopy&amp;#039;&amp;#039;&amp;#039; (&amp;#039;&amp;#039;&amp;#039;SGM&amp;#039;&amp;#039;&amp;#039;) is a [[scanning probe microscopy]] technique with an electrically conductive tip used as  a movable gate that couples capacitively to the sample and probes electrical transport on the [[nanometer]] scale.&amp;lt;ref name=&amp;quot;SellierHackens2011&amp;quot;&amp;gt;{{cite journal|last1=Sellier|first1=H|last2=Hackens|first2=B|last3=Pala|first3=M G|last4=Martins|first4=F|last5=Baltazar|first5=S|last6=Wallart|first6=X|last7=Desplanque|first7=L|last8=Bayot|first8=V|last9=Huant|first9=S|title=On the imaging of electron transport in semiconductor quantum structures by scanning-gate microscopy: successes and limitations|journal=Semiconductor Science and Technology|volume=26|issue=6|year=2011|pages=064008|issn=0268-1242|doi=10.1088/0268-1242/26/6/064008|arxiv=1104.2032|bibcode=2011SeScT..26f4008S}}&amp;lt;/ref&amp;gt;&amp;lt;ref name=&amp;quot;GoriniJalabert2013&amp;quot;&amp;gt;{{cite journal|last1=Gorini|first1=Cosimo|last2=Jalabert|first2=Rodolfo A.|last3=Szewc|first3=Wojciech|last4=Tomsovic|first4=Steven|last5=Weinmann|first5=Dietmar|title=Theory of scanning gate microscopy|journal=Physical Review B|volume=88|issue=3|year=2013|issn=1098-0121|doi=10.1103/PhysRevB.88.035406|arxiv=1302.1151|bibcode=2013PhRvB..88c5406G}}&amp;lt;/ref&amp;gt; Typical samples are [[mesoscopic]] devices, often based on [[semiconductor]] [[heterostructure]]s, such as quantum point contacts or [[quantum dot]]s. [[Carbon nanotube]]s too have been investigated.&lt;br /&gt;
&lt;br /&gt;
==Operating principle==&lt;br /&gt;
In SGM one measures the sample&amp;#039;s [[electrical conductance]] as a function of tip position and tip potential. This is in contrast to other microscopy techniques where the tip is used as a sensor, e.g., for forces. &lt;br /&gt;
&lt;br /&gt;
==Development==&lt;br /&gt;
SGMs were developed in the late 1990s from [[atomic force microscope]]s. Most importantly, these had to be adapted for use at low temperatures, often 4 [[kelvin]]s or less, as the samples under study do not work at higher temperatures. Today an estimated number of eleven research groups worldwide use the technique.&lt;br /&gt;
&lt;br /&gt;
== References ==&lt;br /&gt;
{{reflist}}&lt;br /&gt;
&lt;br /&gt;
{{SPM2}}&lt;br /&gt;
&lt;br /&gt;
[[Category:Scanning probe microscopy]]&lt;/div&gt;</summary>
		<author><name>205.175.106.232</name></author>
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