http://debianws.lexgopc.com/wiki143/index.php?action=history&feed=atom&title=Micro-pulling-downMicro-pulling-down - Revision history2026-06-02T02:35:48ZRevision history for this page on the wikiMediaWiki 1.43.1http://debianws.lexgopc.com/wiki143/index.php?title=Micro-pulling-down&diff=7647843&oldid=previmported>Achmad Rachmani: /* Crystal growth routine */ Line feed2023-08-17T14:08:50Z<p><span class="autocomment">Crystal growth routine: </span> Line feed</p>
<p><b>New page</b></p><div>{{Short description|Crystal growth technique}}<br />
{{Crystallization}}The '''micro-pulling-down (μ-PD)''' method is a [[crystal growth]] technique based on continuous transport of the melted substance through micro-channel(s) made in a [[crucible]] bottom. Continuous [[solidification]] of the melt is progressed on a liquid/solid interface positioned under the crucible. In a steady state, both the melt and the crystal are pulled-down with a constant (but generally different) [[velocity]].<br />
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Many different types of crystal are grown by this technique, including [[Yttrium aluminium garnet|Y<sub>3</sub>Al<sub>5</sub>O<sub>12</sub>]], [[silicon|Si]], [[Silicon-germanium|Si-Ge]], [[Lithium niobate|LiNbO<sub>3</sub>]], <br />
[[Sapphire|α-Al<sub>2</sub>O<sub>3</sub>]], [[Yttria|Y<sub>2</sub>O<sub>3</sub>]], [[Scandium(III) oxide|Sc<sub>2</sub>O<sub>3</sub>]], <br />
[[Lithium fluoride|LiF]], [[Calcium fluoride|CaF<sub>2</sub>]], [[Barium fluoride|BaF<sub>2</sub>]], etc.<ref>{{cite book|title=Shaped Crystals: Growth by Micro-Pulling-Down Technique |editor=T. Fukuda |editor2=V.I. Chani |publisher=Springer-Verlag |location=Berlin |year=2007|isbn=978-3-540-71294-7|url=https://books.google.com/books?id=Dc6PJEOvRv8C|author1=Fukuda, Tsuguo|author2=Chani, Valery I}}</ref><ref>{{cite journal |title=Challenge and study for developing of novel single crystalline optical materials using micro-pulling-down method |first=A. |last=Yoshikawa |author2=Nikl, M. |author3=Boulon, G. |author4= Fukuda, T. |journal=Opt. Mater. |volume=30 |year=2007 |issue=1 |pages=6–10 |doi=10.1016/j.optmat.2006.10.030|bibcode = 2007OptMa..30....6Y }}</ref><br />
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==Crystal growth routine==<br />
Standard routine procedure used in the growth of most of μ-PD crystals is well developed. The general stages of the growths include:<ref>{{Cite web |last=Kral |first=Robert |title=Development of micro-pulling-down method for growth of oxide and halide single crystals |url=https://dms.fzu.cz/25/pdfabstracts/13f.pdf |publisher=Institute of Physics CAS}}</ref><br />
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* Charging of the crucible with starting materials (mixture of powders)<br />
* Heating of the crucible until starting materials in the crucible are completely melted<br />
* Upward displacement of the seed until its contact with the meniscus or crucible<br />
* Formation of the meniscus and partial melting of the seed top<br />
* Correction of the shape of the meniscus through appropriate adjustment of crucible temperature and position of the seed crystal<br />
* Crystal growth through pulling of the seed in downward direction<br />
* Separation of the as grown crystal from the meniscus<br />
* Cooling of the system (including the crystal and the crucible) to room temperature<br />
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==See also==<br />
*[[Crystal growth]]<br />
*[[Czochralski process]]<br />
*[[Float-zone silicon]]<br />
*[[Flux method]]<br />
*[[Laser-heated pedestal growth]]<br />
*[[Shaping processes in crystal growth]]<br />
*[[Verneuil process]]<br />
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*[[Lithium niobate]]<br />
*[[Sapphire]]<br />
*[[Scandium(III) oxide]]<br />
*[[Yttrium aluminium garnet]]<br />
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==References==<br />
{{reflist}}<br />
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[[Category:Chemical processes]]<br />
[[Category:Industrial processes]]<br />
[[Category:Semiconductor growth]]<br />
[[Category:Crystals]]<br />
[[Category:Methods of crystal growth]]<br />
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{{science-stub}}</div>imported>Achmad Rachmani