View source for Polycide

{{onesource|date=December 2009}}

'''Polycide'''<ref>{{Cite journal |last1=Tsai |first1=M. Y. |last2=Chao |first2=H. H. |last3=Ephrath |first3=L. M. |last4=Crowder |first4=B. L. |last5=Cramer |first5=A. |last6=Bennett |first6=R. S. |last7=Lucchese |first7=C. J. |last8=Wordeman |first8=M. R. |date=1981-10-01 |title=One-Micron Polycide (WSi2 on Poly-Si) MOSFET Technology |url=https://iopscience.iop.org/article/10.1149/1.2127219 |journal=Journal of the Electrochemical Society |volume=128 |issue=10 |pages=2207–2214 |doi=10.1149/1.2127219 |issn=0013-4651|url-access=subscription }}</ref> is a [[silicide]] formed over [[polysilicon]]. Widely used in [[DRAM]]s. In a polycide [[MOSFET]] [[transistor]] process, the silicide is formed only over the polysilicon film as formation occurs prior to any polysilicon etch. Polycide processes contrast with [[salicide]] processes in which silicide is formed after the polysilicon etch. Thus, with a salicide process, silicide is formed over both the polysilicon gate and the exposed monocrystalline terminal regions of the transistor in a [[self-aligned gate|self-aligned]] fashion.

==References==
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[[Category:Semiconductor device fabrication]]
[[Category:Silicon]]


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