View source for A-RAM

{{Memory types}}

'''Advanced-Random Access Memory''' ('''RAM''') is a type of [[dynamic random-access memory]] (DRAM) based on single-transistor capacitor-less cells. A-RAM was invented in 2009 at the [[University of Granada]] (UGR), in Spain, in collaboration with the [[Centre National de la Recherche Scientifique]] (CNRS), in France. It was conceived by Noel Rodriguez (UGR), Francisco Gamiz (UGR) and Sorin Cristoloveanu (CNRS). A-RAM is compatible with single-gate [[silicon on insulator]] (SOI), double-gate, [[Multigate device#FINFET|FinFETs]] and multiple-gate [[field-effect transistor]]s (MuFETs).

The conventional 1-transistor + 1-capacitor DRAM is extensively used in the semiconductor industry for manufacturing high-density dynamic memories. In 2009, the researchers thought that in manufacturing processes with features smaller than 45&nbsp;nm, the DRAM industry would need to avoid the miniaturization issue of the memory-cell capacitor. The 1T-DRAM family of memories, including A-RAM, replaced the storage capacitor for the floating body of SOI transistors to store the charge.<ref>{{Cite journal |title= A-RAM: Novel capacitor-less DRAM memory |work= 2009 International SOI Conference |publisher= IEEE |date= 5 October 2009 |doi= 10.1109/SOI.2009.5318734 |author= Noel Rodriguez, Sorin Cristoloveanu and Francisco Gamiz }}</ref><ref>{{Cite journal |title= A-RAM Memory Cell: Concept and Operation |work= Electron Device Letters |publisher= IEEE |date= September 2010 |doi=   10.1109/LED.2010.2055531 |pages=972-974 |author= Noel Rodriguez, Sorin Cristoloveanu and Francisco Gamiz }}</ref>

The universities obtained at least one patent on the technology,<ref>Patent number: FR09/52453, "Point mémoire RAM à un transistor", [[National Industrial Property Institute (France)|Institut National de la Propriété Industrielle]]</ref> and tried to license it in 2010.<ref>{{Cite news |title= France's CNRS offers nano-memory IP |author= Peter Clarke |date= 19 October 2010 |work= EE Times |url= http://www.eetimes.com/document.asp?doc_id=1257653 |accessdate= 30 September 2016 }}</ref> The University of Granada ran a web site promoting the technology, updated through 2010.<ref>{{Cite web |title= A-RAM: The Advanced DRAM Substitute |work= Web site |url= http://a-ram.org/ |archivedate= 18 May 2013 |archiveurl= https://web.archive.org/web/20130518010428/http://a-ram.org/ |url-status= dead |publisher= University of Granada |date= 2010 |accessdate= 30 September 2016 }}</ref> A version called A2RAM was demonstrated in 2012.<ref>{{Cite news |title= Scientists design a revolutionary data storage device |date= 22 November 2012 |work= Science Daily news release |author= University of Granada |url= https://www.sciencedaily.com/releases/2012/11/121122095315.htm |accessdate= 30 September 2016 }}</ref>

== References ==
{{Reflist}}

[[Category:Types of RAM]]